Recent Progress in Graphene Research

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International Workshop on Recent Progress in Graphene Research

June 29 - July 2, 2009

Korea Institute for Advanced Study, Seoul


Graphene, a single layer of carbon, is a condensed matter realization of the relativistic two-dimensional Dirac equation. After successful isolations of graphene in 2004, graphene has shown a cornucopia of interesting new physical phenomena with an exponentially increasing literature. The main driving forces behind the interests in graphene are two-fold: basic science and future technological applications. This workshop will cover the latest developments in graphene research, both experimentally and theoretically, from fundamental properties to device applications.


Speakers

Tsuneya Ando (Tokyo Inst. of Tech., Japan)

Eva Andrei (Rutgers Univ., USA)

Antonio H. Castro Neto (Boston Univ., USA)

Hyeonsik Cheong (Sogang Univ., Korea)

Sankar Das Sarma (Univ. of Maryland, USA)

Toshiaki Enoki (Tokyo Inst. of Tech., Japan)

Klaus Ensslin (ETH Zurich, Switzerland)

Vladimir Falko (Lancaster Univ., UK)

Andrea Ferrari (Univ. of Cambridge., UK)

Francisco Guinea (ICMM-CSIC, Spain)

Byung Hee Hong (Sungkyunkwan Univ., Korea)

Pablo Jarillo-Herrero (MIT, USA)

Kwang Soo Kim (POSTECH, Korea)

Philip Kim (Columbia Univ., USA)

Jing Kong (MIT, USA)

Alessandra Lanzara (UC Berkeley, USA)

Hu-Jong Lee (POSTECH, Korea)

Steven G. Louie (UC Berkeley, USA)

Alberto F. Morpurgo (TU Delft, The Netherlands)

Yoshiyuki Miyamoto (NEC, Japan)

Kostya Novoselov (Univ. of Manchester, UK)

Barbaros Oezyilmaz (Nat'l Univ. of Singapore, Singapore)

Nuno Miguel R. Peres (Univ. of Minho, Portugal)

Marcos Pimenta (UFMG, Brazil)

Marek Potemski (CNRS Grenoble, France)

Rodney S. Ruoff (UT Austin, USA)

Katsunori Wakabayashi (NIMS-MANA, Japan)

Amir Yacoby (Harvard Univ. USA)


Organizers

Young-Woo Son (KIAS)

Kyeongjae Cho (UT Dallas & KIAS)

Antonio H. Castro Neto (Boston Univ.) 

  

Contact 
    
Soyoung Kim  soyoung (at) kias.re.kr

Jisu Han  jshan (at) kias.re.kr

Tel : +82 2 958 3781

Fax : +82 2 958 3770